Title page for 985201053


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Student Number 985201053
Author Tsung-Yu Ke(柯宗佑)
Author's Email Address No Public.
Statistics This thesis had been viewed 1113 times. Download 23 times.
Department Electrical Engineering
Year 2010
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title A 600V AlGaN/GaN Schottky Barrier Diode(SBD)on Si Substrate with Fast Reverse Recovery Time
Date of Defense 2011-07-07
Page Count 84
Keyword
  • AlGaN
  • GaN
  • reverse recovery time
  • Schottky barrier diode
  • Abstract Lateral AlGaN/GaN Schottky Barrier Diodes (SBDs) on Si substrate have been fabricated and characterized. AlGaN/GaN hetero-junction layers were grown on 4-inch p-type Si (111) substrate with 2 ?m buffer layer.
    The measurement of etching pit density (EPD) of GaN films on Si substrate is about 1.92×109 cm-2 by atomic force microscopy (AFM). The full width at half maximum value (FWHM) of x-ray diffraction rocking curve for the GaN film on Si (111) substrate is 536 arc-sec (002 reflection), which is related to the screw type dislocation and resulted leakage current. The Hall measurement showed the mobility of 1430 cm2 /V-s with a sheet carrier density of 9.8?1012 cm-2 for the AlGaN/GaN structure across the wafer.
    The AlGaN/GaN SBDs were implemented by Ti/Al/Ni/Au Ohmic and Ni/Au Schottky contacts. The Ohmic contacts were deposited on both side of Schottky contact with equal distance. The Schottky-to-Ohmic contact distance (LGS) was varied from 10 to 30 ?m in this study. The specific on-state resistance (RON) was 1.3 m?-cm2, while the forward turn-on voltage was 1.4 V at the current density of 100 A/cm2 for device with LGS = 10 ?m. The measured reverse breakdown voltage (VB) at room temperature was up to 600 V without edge terminal scheme. The measured VB is not function of LGS, which mainly depends on the buffer layer structure.
    The figure-of-merit is defined (VB)2/RON, that was 277 MWcm-2. And reverse recovery time was < 10 ns for device (without package) switched from a forward current density of ~720 A/cm2 (1 A) to a reverse bias of 30 V with di/dt of 100 A/?s.
    Table of Content 摘要……IV
    Abstract..………………………………………………………………………………V
    致謝........VI
    圖目錄…IX
    表目錄…XII
    第一章緒論1
    1.1前言1
    1.2 AlGaN/GaN Schottky Barrier Diode 市場發展與應用2
    1.3 AlGaN/GaN Schottky Barrier Diode 國內外相關研究成果4
    1.4本實驗研究動機與目的7
    1.5 論文架構9
    第二章氮化鎵磊晶於矽基板材料之結構分析10
    與元件製程10
    2.1前言10
    2.2磊晶材料特性分析10
    2.2.1成長於矽基板之氮化鎵鋁/氮化鎵試片10
    2.2.2磊晶試片差排缺陷密度量測與分析11
    2.2.3 X光繞射儀量測分析氮化鎵磊晶品質14
    2.2.4 Hall measurement分析試片的通道特性15
    2.2.5歐姆接觸的製作與量測16
    2.3 AlGaN/GaN Schottky Barrier Diode 製程步驟18
    2.4 結論23
    第三章 AlGaN/GaN Schottky Barrier Diode24
    3.1前言24
    3.2順向低導通電阻與低開啟電壓24
    3.2.1順向電流-電壓特性24
    3.2.2位障高度的量測35
    3.2.3理想因子的分析38
    3.3逆向高崩潰電壓與漏電流分析42
    3.3.1元件逆偏高崩潰特性42
    3.3.2元件故障之分析44
    3.4藉由電容-電壓量測探討製程後元件的通道特性47
    3.4.1 AlGaN/GaN SBDs電容-電壓特性介紹47
    3.4.2 AlGaN/GaN SBDs電容-電壓量測分析47
    3.4.3元件通道內載子濃度與空乏深度的探討51
    3.4元件在變溫下特性之改變54
    3.6具有快速開關特性之蕭基特二極體56
    3.6.1快速回復二極體介紹56
    3.6.2 AlGaN/GaN SBDs逆向回復特性56
    3.6.3 AlGaN/GaN SBDs逆向回復特性分析與討論61
    3.7 結論62
    第四章 結論63
    4.1結論63
    4.2 未來展望64
    參考文獻65
    附錄 口試問題回答69
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    Advisor
  • Yue-Ming Hsin(辛裕明)
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    Date of Submission 2011-07-26

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