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Student Number 975201116
Author Ting-chun Kuan(管挺鈞)
Author's Email Address 975201116@cc.ncu.edu.tw
Statistics This thesis had been viewed 787 times. Download 1262 times.
Department Electrical Engineering
Year 2009
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title Electrical Characterization of CiPVP Dielectric Layer and its Application on Organic Thin-Film Transistors
Date of Defense 2010-07-28
Page Count 76
Keyword
  • Dielectric Layer
  • Organic Thin-Film Transistors
  • Abstract In recent years, organic thin-film-transistor attracts attention in both industrial and academic fields. Because low in production cost and high in ductility, it can be applied to electronic paper easily, combined with innovation. Still, organic semiconductors have its’ own problems: the mobility is not fast enough, and the compactness of organic dielectric layer is not as good as inorganic material as well. Therefore, organic thin-film-transistor still needs to improve itself on these areas. How to improve its performance to be good as inorganic thin-film-transistors is one of the main topics.
     In this paper, we focused on organic material in dielectric layer (CiPVP) to do a complete assessment of electrical and reliability. The main purpose of developing CiPVP materials is to achieve more stable reliability by its excellent resistance to water and oxygen features. By a series of electrical characterization, we can understand whether organic dielectric layer can well resist water and oxygen features when it is applied to organic thin-film-transistor and its electrical characteristic.
     Electrical tests show that CiPVP applied to metal- dielectric layer-metal diode and organic thin-film-transistors is worse than common dielectric layer material, PVP. Because of the poor surface roughness and compactness of CiPVP, there are more bulk trapped charges and interface trapped charges than those in PVP.
     Nevertheless, CiPVP has more stable electrical characteristic in thinner dielectric layer and better behavior in bias stress test and humility test when thickness changed. In conclusion, CiPVP has some problems to be solved but still enough selling points.
    Table of Content 中文摘要……………………………………………………i
    英文摘要……………………………………………………ii
    致謝…………………………………………………………iii
    目錄…………………………………………………………iv
    圖目錄………………………………………………………vi
    表目錄……………………………………………………viii
    第一章 緒論
    1-1 研究動機………………………………………1
    1-2有機薄膜電晶體之優點…………………………2
    1-3目前瓶頸…………………………………………3
    1-4研究目標…………………………………………6
    第二章 介電層材料本質特性分析
    2-1 前言……………………………………………8
    2-2 CiPVP與PVP分子結構分析與比較……………8
    2-3 MIM測試元件的製作…………………………10
    2-4 MIM崩潰電場量測……………………………14
    2-5 MIM漏電流量測………………………………16
    2-6 MIM CV量測……………………………………18
    第三章 有機薄膜電晶體的製作以及量測
     3-1 前言……………………………………………21
     3-2 有機薄膜電晶體的結構與製作………………21
         3-3 有機薄膜電晶體的CV量測……………………25
      3-4 有機薄膜電晶體Id-Vg量測…………………26
         3-5 有機薄膜電晶體Id-Vd量測……………………33
      3-6 介電層薄膜因製作過程產生的應力對主動層
           的影響…………………………………………36
    3-7 Bottom Gate結構與製作流程…………………37
    3-8 改良後之電性量測……………………………40
    3-9 結論……………………………………………45
    第四章 有機薄膜電晶體的環境可靠度測試
         4-1 前言……………………………………………48
      4-2 時間偏壓測試…………………………………48
      4-3 高溼儲存測試…………………………………54
    第五章 總結與展望……………………………………………62
    參考文獻………………………………………………………64
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    Advisor
  • Pei-wen Li(李佩雯)
  • Yi-jen Chan(詹益仁)
  • Files
  • 975201116.pdf
  • approve immediately
    Date of Submission 2010-08-18

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