||In recent years, organic thin-film-transistor attracts attention in both industrial and academic fields. Because low in production cost and high in ductility, it can be applied to electronic paper easily, combined with innovation. Still, organic semiconductors have its’ own problems: the mobility is not fast enough, and the compactness of organic dielectric layer is not as good as inorganic material as well. Therefore, organic thin-film-transistor still needs to improve itself on these areas. How to improve its performance to be good as inorganic thin-film-transistors is one of the main topics.|
In this paper, we focused on organic material in dielectric layer (CiPVP) to do a complete assessment of electrical and reliability. The main purpose of developing CiPVP materials is to achieve more stable reliability by its excellent resistance to water and oxygen features. By a series of electrical characterization, we can understand whether organic dielectric layer can well resist water and oxygen features when it is applied to organic thin-film-transistor and its electrical characteristic.
Electrical tests show that CiPVP applied to metal- dielectric layer-metal diode and organic thin-film-transistors is worse than common dielectric layer material, PVP. Because of the poor surface roughness and compactness of CiPVP, there are more bulk trapped charges and interface trapped charges than those in PVP.
Nevertheless, CiPVP has more stable electrical characteristic in thinner dielectric layer and better behavior in bias stress test and humility test when thickness changed. In conclusion, CiPVP has some problems to be solved but still enough selling points.
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