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Student Number 975201059
Author Sheng-Xue Xiao(蕭聖學)
Author's Email Address money_ace@hotmail.com
Statistics This thesis had been viewed 959 times. Download 718 times.
Department Electrical Engineering
Year 2009
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title Thermoelectric Properties in Multiple Quantum Dot System
Date of Defense 2010-06-28
Page Count 44
Keyword
  • figure of merit
  • quantum dot
  • Thermoelectric effect
  • Abstract The electrical conductance, thermal conductance, thermal power and figure of merit (ZT) of semiconductor quantum dots (QDs) embedded into an insulator matrix connected with metallic electrodes are theoretically investigated in the Coulomb blockade regime. The multilevel Anderson model is used to simulate the multiple QDs junction system. The charge and heat currents in the sequential tunneling process are calculated by the Keldysh Green function technique. In the linear response regime the ZT values are still very impressive in the small tunneling rates case, although the effect of electron Coulomb interaction on ZT is significant.
    Table of Content 目錄
    摘要Ⅰ
    AbstractⅡ
    誌謝Ⅲ
    目錄IⅤ
    圖目錄Ⅵ
    表目錄ⅥI
    第一章 導論1
    1-1 前言1
    1-2熱電元件簡介2
    1-3 熱電元件基本定理4
    1-4 熱電材料發展6
    第二章 理論原理9
    2-1 系統模型9
    2-2 推遲格林函數13
    2-2-1 單量子點格林函數14
    2-2-2 多量子點格林函數14
    2-3 量子點電晶體ZT的定義18
    第三章 單電子電晶體熱電特性21
    3-1 前言21
    3-2 多量子點系統23
    3-2-1 元件結構23
    3-2-2 基態能階偏移25
    3-2-3 電子庫倫交互作用27
    3-2-4 電子的非彈性碰撞29
    3-3 聲子熱導31
    第四章 閘極電壓對多量子點系統之影響34
    4-1 前言34
    4-1-1 ZT值與其各項參數34
    4-2 閘極電壓對不同量子點系統的影響38
    4-2-1 閘極電壓對量子點在不同間距下的影響38
    4-2-2 閘極電壓對相異量子點系統的影響40
    第五章 結論41
    參考文獻42
    Reference 參考文獻
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    Advisor
  • David M.-T. Kuo(郭明庭)
  • Files
  • 975201059.pdf
  • approve immediately
    Date of Submission 2010-07-12

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