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Student Number 963303018
Author CHAO KUAN(趙冠翔)
Author's Email Address No Public.
Statistics This thesis had been viewed 1348 times. Download 6 times.
Department Executive Master of Mechanical Engineering
Year 2008
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title Electrochemical etch of p-Si(100) dispersed with nano-Ag particles in the NH4F/H2O2 solution
Date of Defense 2009-07-23
Page Count 130
Keyword
  • ammo
  • electrochemical etching
  • p-type(100) silicon
  • Abstract The aim of this work was to prepare porous silicon(PS) by
    electrochemical etch of p-type silicon (100) coated with nano-Ag
    particles in an aqueous solution of ammonium fluoride mixed with
    hydrogen peroxide. DC potentiodynamic polarization was conducted and
    the anodic polarization curves were analyzed to find the optimal
    potentials for potentiostatic preparation of the PS.
    The results displayed that deep holes were produced
    electrochemically on the silicon dispersed with nano-Ag particles in the
    solution containing ammonium fluoride and hydrogen peroxide. The
    corrosion potential shifts to active direction and the etching rate increases
    with increasing the reaction temperature and the concentration of
    hydrogen peroxide. The optimal temperature to obtain porous silicon was
    at 60℃ to obtain the highest depth. The activation energy is estimated to
    be 48.4 KJ/mol for the etching system by the Arrhenius plot.
    Table of Content 中文摘要 i
    英文摘要 ii
    誌謝 iii
    目錄 iv
    表目錄 viii
    圖目錄 x
    第一章、簡介 1
    1-1、研究背景 1
    1-1-1 多孔矽及其應用 1
    1-1-2 多孔矽的製作技術 1
    1-2、研究目的 3
    第二章、基礎原理與文獻回顧 5
    2-1、半導體電化學理論 5
    2-1-1 半導體材料電子能階 5
    2-1-2 電解液的電子能階-絕對電極電位 5
    2-1-3 半導體卅電解液界面 6
    2-1-3-1 平衡狀態 6
    2-1-3-2 平帶電位 8
    2-2、多孔矽形成機制 8
    2-2-1 矽在電解液中的電流-電壓(I-V)特性 9
    2-2-2 矽的陽極溶解反應 10
    2-2-3 多孔矽的形成模型 12
    2-2-3-1 貝爾模型 12
    2-2-3-2 擴散機制模型 14
    2-2-3-3 Zhang 模型 17
    2-2-3-4 Unagami 模型 19
    2-2-4 電化學蝕刻製作多孔矽結構 21
    2-3、觸媒催化反應 23
    2-3-1 過氧化氫性質 23
    2-3-2 觸媒反應原理 24
    2-3-3 觸媒種類 25
    2-3-4 觸媒金屬應用於矽蝕刻 25
    2-4、活化能的測定 27
    第三章、實驗方法與進行步驟 29
    3-1 還原銀溶液配製 29
    3-2 試片選擇 29
    vi
    3-3 試片前處理 29
    3-4 實驗設備 30
    3-5 蝕刻液選擇 31
    3-6 蝕刻方法 31
    3-7 表面形貌觀察 32
    第四章、結果 33
    4-1 蝕刻液特性 33
    4-1-1 氟化銨系統pH 與導電度量測 33
    4-1-2 氫氟酸系統pH 與導電度量測 33
    4-2 塗佈銀溶液之試片 34
    4-2-1 開路電位(OCP)量測 34
    4-2-2 陽極動態極化曲線 35
    4-2-3 濕式蝕刻與電化學蝕刻 35
    4-3 未塗佈銀溶液之試片對照 38
    4-3-1 開路電位(OCP)量測 38
    4-3-2 陽極動態極化曲線 38
    4-3-3 濕式蝕刻與電化學蝕刻 40
    4-4 氫氟酸系統與文獻對照 41
    4-4-1 開路電位(OCP)量測 42
    4-4-2 陽極動態極化曲線 43
    4-4-3 濕式蝕刻與電化學蝕刻 44
    4-4-4 文獻對照-同步蝕刻之可能性 46
    4-5 溫度變化對氟化銨系統之影響 47
    4-5-1 開路電位(OCP)量測 47
    4-5-2 陽極動態極化曲線 48
    4-5-3 電化學蝕刻 49
    4-5-4 活化能之計算 50
    第五章、討論 51
    5-1 蝕刻液特性與影響 51
    5-2 塗佈銀溶液之試片 51
    5-3 未塗佈銀溶液之試片 53
    5-4 與文獻氫氟酸系統之比較 54
    5-5 溫度變化對氟化銨系統之影響 55
    第六章、結論 57
    第七章、未來展望 59
    參考文獻 60
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    Advisor
  • Lin, Jing-Chie(林景崎)
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