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Student Number 963204026
Author Chang-Jung Kuo(郭昌容)
Author's Email Address No Public.
Statistics This thesis had been viewed 1517 times. Download 694 times.
Department Chemical and Materials Engineering
Year 2008
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title Field emission properties of carbon nanotubes grown on novel silicon nanostructures
Date of Defense 2009-07-08
Page Count 111
Keyword
  • CNT
  • Field emission
  • Abstract Leica E-beam lithography and etching were used to create nanopillars array with different spaces from 2 ?m to 100 ?m. We used scanning electronic microscope to observe the morphology of the pillars and check the distance between the pillars. We measured the field emission characteristic and found that the field emission had lower turn-on field with increasing distance. Comparing to other samples with different distance, we found that 2 ?m pillar had the lowest current density.
    We also observed that the nanopillars did not exceed carbon nanotubes in the field emission performance. To improve the field emission performance, we used high density plasma chemical vapor deposition system to create another nanostructure on nanopillar. RF power was used to generate hydrogen and argon plasma to evenly etch the nanopillar on 6 inch wafer. Through this process, we got nanograss, which may be the smallest silicon nanostructure in the world. This two-tier nanograss-on-nanopillar structure had better characteristic of field emission than nanopillar array, but still not exceeded carbon nanotubes.
    Finally we tried to grow carbon nanotubes on top of this two-tier nanostructure. We adopted three methods to grow carbon nanotubes on nanograss, which were F13TCS evaporation, 7 nm nickel coating, and CHF3 plasma treatment. The scanning electronic microscope showed that only the sputtering methods would lead to uniform carbon nanotubes on the nanograss, so we chose the sputtering as the growing methods for catalyst layer. After we grew carbon nanotubes on the two-tier nanostructures, we found that their field emission characteristic exceeded carbon nanotube successfully. F-N plot of all the structure shows that the measured current originated from the tunneling mechanism.
    Table of Content 碩博士論文電子檔授權書……………………………………………..…………….II
    論文指導教授推薦書………………………………………………………………..III
    論文口試委員審定書…………………………………….……………….………….V
    中.文摘要…………………………………………………………………..…………V
    英文摘要……………………………………………………………………………VII
    誌謝……………………………………………………………………………..….VIII
    圖目錄…………………………………………………………………………..……II
    表目錄…………………………………………………………………………….XVII
    第一章 緒論…………………………………………………………………………1
    1-1 前言……………………………………………………………………………..1
    1-2 研究動機………………………………………………………………………..9
    第二章 理論與文獻回顧…………………………………………………………..12
    2-1 準直矽奈米結構形成機制……………………………………………………12
    2-2 奈米碳管結構與特性…………………………………………………………15
    2-3 奈米碳管製備方法……………………………………………………………20
    2-4 順向成長原理與方法…………………………………………………………23
    2-4.1. 纖維間凡得瓦力…………………………………………………………23
    2-4.2. 模板輔助成長……………………………………………………………24
    2.4.3. 電場………………………………………………………………………24
    2-5 奈米碳管氣相成長機構………………………………………………………27
    2-5.1. 碳原子的擴散路徑:……………………………………………………27
    2-5.2. 催化劑中碳原子的擴散驅動力…………………………………………29
    2-5.3. 成長起源:頂部成長模式及底部成長模式……………………………29
    2-5.4. 氫氣對奈米碳管生長的影響……………………………………………33
    2-6 奈米結構上生長奈米碳管……………………………………………………33
    2-6.1 金屬催化劑沉積的方法…………………………………………………33
    2-6.2 於親水性奈米草上生長奈米碳管………………………………………36
    2-6.3 以PTFE 薄膜生長奈米碳管 ……………………………………………38
    2-7 電子場發射特性………………………………………………………………40
    2-7.1 場發射增強因子β……………………………………………………….42
    2-8 場發射如今之發展與比較…………………………………………………....44
    第三章 實驗方法與流程………………………………………………………..…47
    3-1 實驗材料與設備………………………………………………………………47
    3-1.1. 基版材料與化學品………………………………………………………47
    3-1.2. 製程設備…………………………………………………………………48
    3-1.3. 分析儀器…………………………………………………………………49
    3-2 實驗流程………………………………………………………………………49
    3-3 實驗步驟……………………………………………………………………….50
    3-3.1 製作多種間距之奈米柱………………………………………………….50
    3-3.2 準直矽奈米草的製作…………………………………………………….52
    3-3.3 成長奈米碳管之催化劑製程…………………………………………….52
    3-3.4 成長奈米碳管之生長…………………………………………………….53
    3-3.5 奈米碳管與基板的分析………………………………………………….54
    3-3.6 場發射載台之架設……………………………………………………….54
    3-3.7 真空電性量測步驟…………………………………………………….…56
    第四章 結果與討論…………………………………………………………………57
    4-1 奈米柱之分析……………………………………………………………….…57
    4-1.1 奈米柱的表面形貌……………………………………………………….57
    4-4.1. 奈米柱的電性量測結果………………………………………………….61
    4-4.2. 奈米柱場發射之結果與討論…………………………………………….64
    4-2 奈米柱上蝕刻奈米草之分析………………………………………………….66
    4-2.1 奈米柱上蝕刻奈米草之表面形貌……………………………………….66
    4-2.2 米柱上蝕刻奈米草之電性量測………………………………………….68
    4-2.3 奈米柱上蝕刻奈米草之結果與討論…………………………………….71
    4-3 碳管成長於奈米柱上蝕刻奈米草之分析…………………………………….72
    4-3.1 使用不同方式成長奈米碳管之結果…………………………………….72
    4-3.2 碳管成長於奈米柱上蝕刻奈米草之分析………………….……………76
    4-3.3 碳管成長於奈米柱上蝕刻奈米草之電性量測…………….……………80
    4-4 不同間距結構之電性比較…………………………………………….………83
    4-5 FOWLER-NORDHEIM 方程式之計算…………………….…………………90
    第五章 結論………………………………………………………………….……94
    參考文獻………………………………………………………………….…………96
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    Advisor
  • Cheng-Tung Chou(周正堂)
  • Jiann Shieh(謝健)
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    Date of Submission 2009-07-22

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