Title page for 963204013


[Back to Results | New Search]

Student Number 963204013
Author Ming-Chiung Kuo(郭明崇)
Author's Email Address No Public.
Statistics This thesis had been viewed 1310 times. Download 1000 times.
Department Chemical and Materials Engineering
Year 2008
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title Wafer bonding of Cu/Sn/Ag and the stress relief of GaN film
Date of Defense 2009-06-04
Page Count 55
Keyword
  • compressive stress relief
  • wafer bonding
  • Abstract Abstract
    To pursuit higher output power of LED for general lighting applications, the poor thermal and electrical conduction of the sapphire substrate is a hurdle to be solved. For the last few years, peoples believe that Thin-GaN LED is the one having a great potential to be the solution of high-power LED applications. To fabricate Thin-GaN LED, wafer bonding is often used to transfer the GaN epilayer onto the thermal conductive substrate, i.e., Si wafer in this work. Previous researches indicate that a high thermal stress would be resulted from the difference of the coefficient of thermal expansions between sapphire substrate and the transferring Si substrate. The thermal stress would cause serious cracking on the GaN epi-layer. Therefore, a low- temperature wafer bonding is the key step for a successful process of Thin-GaN LED. In this work, a low-temperature wafer bonding process using Cu-Sn-Ag solid diffusion bonding is successfully developed. The primary results show that an uniform bonding interface can be achieved at 150 ℃. Using Cu-Sn-Ag solid diffusion wafer bonding, GaN MOCVD epi-layer was transferred on the Si wafer, then, thin-GaN LED was processed. Then, the stress relief of thin-GaN LEDs was measured and compared with different bonding temperatures, systems, and process ambient.
    Table of Content 第一章 緒論 ......... 1
    第二章 文獻回顧 ................ 3
    2-1 High-Power Light Emitting Diode ............... 3
    2-2 晶圓鍵合(Wafer bonding) ......... 7
    2-3 拉曼散射(Raman scattering) .......... 8
    2-4 雷射剝離 .............. 11
    第三章 實驗方法與步驟 .... 14
    3-1 實驗材料 ..........14
    3-2 實驗步驟 ...............14
    3-3 鍵結金屬層的蒸鍍和選擇 ...........16
    3-4 晶圓鍵結程序 ............17
    3-5 銅錫銀界面原子濃度分佈的量測 .........21
    3-6 Cu/Sn/Ag 鍵結系統運用於GaN薄膜轉移上 ......23
    3-7 N-GaN薄膜應力的量測 ...........25
    第四章 結果與討論 ........... 27
    4-1 金屬化合物的生成 ............27
    4-2 不同鍵結金屬對應力釋放的影響 .........29
    4-3 GaN薄膜應力改變機制 .........32
    4-4 鍵結錫層對GaN薄膜應力釋放的影響...........37
    4-5 應力改變對 MQW 的影響 .......41
    4-6 晶圓鍵結降低極化效應 ............48
    第五章 結論 ....... 52
    參考文獻 ............. 54
    Reference 參考文獻
    [1] T. Kozawa, T. Kachi, H. Kano, N. Koide and K. Manabe, “Thermal stress in GaN epitaxial layers grown on sapphire substrates”, J. Appl. Phys. 77, 4389 (1995).
    [2] D. G. Zhao, S. J. Xu, M. H. Xie, S. Y. Tong and Hui. Yang, “Stress and its effect on optical properties of GaN epi-layers grown on Si(111), 6H-SiC(0001), and c-plane sapphire”, Appl. Phys. Lett. 83, p. 677, (2003).
    [3] E. Fred Schubert, “Light-emitting diodes”, Cambridge University Press, 2006, New York.
    [4] D.N. Talwar, D. Sofranko, C. Mooney, S. Tallo, “Elastic, structural, bonding, and defect properties of zinc-blende BN, AlN, GaN, InN and their alloys”, Materials Science and Engineering B 90 (2002) 269–277
    [5] W. B. Yu, J. Wei, C. M. Tan and G. Y. Huang, “Mathematical model of low-temperature wafer bonding under medium vacuum and its application”, IEEE Transactions on Advanced Packaging 28 (4) p. 650-658, 2005.
    [6] J. M. Zhang, T. Ruf, M. Cardona, O. Ambacher, M. Stutzmann, J. –M. Wagner and F. Bechstedt, “Raman spectra of isotopic GaN”, Physical Review B, 56 (22), p. 14399-14406, 1997.
    [7] T. Kozawa, T. Kachi, H. Kano, H. Nagase, N. Koide, and K. Manabe, “Thermal stress in GaN epitaxial layers grown on sapphire substrates”Appl. Phys. Lett. 77, 4389 (1995).
    [8] J. Xu, R. Zhang, Y. O. Wang, X. Q. Xiu, B. Shen, S. L. Gu, Y. Shi, Z. G. Liu and Y. D. Zheng, “Preparation of large area freestanding GaN by laser lift-off technology”, Mater Lett, 56 p. 43, (2002).
    [9] X. C. Wang, G. C. Lim, W. Liu, C. B. Soh and S. J. Chua, “Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaN”, Appl Surf Sci, 252 p. 2071, (2005).
    [10] H-J. Albrecht, A. Juritza, K. Muller, W.H. Mullerz, J. Sterthauz, J. Villain, and A. Vogliano, “Interface Reactions in Microelectronic Solder Joints and Associated Intermetallic Compounds: An Investigation of their Mechanical Properties using Nanoindentation ”, 2003 Electronics Packaging Technology Conference, Page(s): 726-731
    [11] O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, and L. F. Eastman, “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures”, J. Appl. Phys., Vol. 85, No. 6, 15 March 1999
    [12] J. L. SaÂnchez-Rojas, J. A. Garrido, and E. MunÄoz, “Tailoring of internal fields in AlGaN/GaN and InGaN/GaN heterostructure devices” Physical Review B, Vol. 61, No. 4, 2773-2778, (2000)
    [13] 賴志遠 Ⅲ族半導體的極化電場效應 國立中央大學物理學系博士論文 中華民國92年7月
    [14] Jiuru Xu, Martin F. Schubert, Ahmed N. Noemaun, Di Zhu, Jong Kyu Kim, E. Fred Schubert, Min Ho Kim, Hun Jae Chung, Sukho Yoon, Cheolsoo Sone, and Yongjo Park, “Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes” Appl. Phys. Lett. 94, 011113, (2009)
    Advisor
  • Cheng-yi Liu(劉正毓)
  • Files
  • 963204013.pdf
  • approve in 3 years
    Date of Submission 2009-06-18

    [Back to Results | New Search]


    Browse | Search All Available ETDs

    If you have dissertation-related questions, please contact with the NCU library extension service section.
    Our service phone is (03)422-7151 Ext. 57407,E-mail is also welcomed.