Title page for 962202012


[Back to Results | New Search]

Student Number 962202012
Author Hui-Tsu Tseng(曾惠足)
Author's Email Address No Public.
Statistics This thesis had been viewed 1642 times. Download 2473 times.
Department Physics
Year 2008
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title 氮化鋁為導熱基板的發光二極體特性研究
Date of Defense 2009-06-25
Page Count 66
Keyword
  • junction temperature
  • thermal resist
  • thin-GaN LED
  • wafer bonding
  • Abstract In this thesis, we demonstrate thin-GaN LEDs bonded on AlN substrate. The electric, optical and thermal properties of thin-GaN LEDs bonding on AlN and Si substrates were analyzed and compared.
    One side published AlN substrate was used in this study. Root-mean-square (RMS) roughness of published surface was about 40 nm. 3-ω method was used to determine the thermal conductivity of AlN and Si substrates. The thermal conductivities of AlN and Si substrates were 179 W/m-k and 130 W/m-k respectively.
    LED wafers were bonded on 380-μm-thick AlN, 630-μm-thick AlN, and 525-μm-thick Si substrates by Au-Ag bonding method. After wafer bonding, laser lift-off method was employed to take sapphire substrate off. Then thin-GaN LEDs with a chip size of 1 × 1 mm2 were fabricated. Forward voltages of these three kinds of LEDs with an input current of 350 mA were all about 4 V. The output power of LEDs bonding on 380-μm-thick AlN, 630-μm-thick AlN, and 525-μm-thick Si substrates which was measured in an input current of 350 mA is about 32 ± 4 mW, 34 ± 5 mW, and 33 ± 7 mW, respectively. This indicated that the electric and optical performance of thin-GaN LED bonded on AlN is as good as LEDs bonded on Si substrate. The thermal resistances and junction temperatures of LEDs were measured by diode forward voltage method. The junction temperatures of LEDs bonded on 380-μm-thick AlN, 630-μm-thick AlN, and 525-μm-thick Si substrates were about 112 ± 5 oC、113 ± 7 oC and 117 ± 5oC , respectively. The thermal resists of LEDs bonding on 380-μm-thick AlN, 630-μm-thick AlN, and 525-μm-thick Si substrates were about 18 ± 4 oC/W、18 ± 1.4 oC/W and 、17.6 ± 4.3 oC/W, respectively. Since thermal conductivity of AlN is higher than that of Si, thin-GaN LEDs bonded on AlN substrate should have better heat dissipation than LEDs bonded on Si substrate. However, the difference of thermal resistances between LEDs bonded on 380-μm-thick AlN, 630-μm-thick AlN, and 525-μm-thick Si substrates is not obvious. This should be due to that surface roughness of AlN was larger than that of Si therefore more voids were formed between Au-Ag interface when bonded on AlN. The voids between Au-Ag interface would result in the increase of thermal resistance. Hence the difference of thermal resistances between LEDs bonded on AlN and Si substrates is not obvious.
    Table of Content 中文摘要i
    Abstractiii
    致謝v
    目錄vi
    表目錄viii
    圖目錄ix
    第一章 導論1
    1-1 簡介1
    1-2 研究動機3
    第二章 量測原理與設備7
    2-1 3-ω 熱導率量測原理與架構7
    2-2 金-銀晶圓鍵合技術9
    2-3 雷射剝離原理9
    2-4 光電特性量測系統10
    2-5 發光二極體熱阻及接面溫度量測原理與架構11
    第三章 氮化鋁基板特性量測與分析16
    3-1 氮化鋁結構分析16
    3-2 氮化鋁表面形貌與成分分析16
    3-3 氮化鋁表面粗糙度分析17
    3-4 氮化鋁及矽基板熱導率量測18
    3-5 氮化鋁基板及矽基板之比較18
    第四章Thin-GaN LED鍵合在氮化鋁基板製作與特性分析27
    4-1 Thin-GaN LED鍵合在氮化鋁基板製作流程27
    4-2 Thin-GaN LED鍵合在氮化鋁基板光電特性分析33
    4-3 Thin-GaN LED鍵合在氮化鋁基板熱阻及接面溫度分析35
    第五章 結論與未來工作51
    5-1結論51
    5-2 未來工作52
    參考文獻53
    Reference [1] H. Kim, et., Appl. Phys. Lett77, pp.1903, 2000
    [2] D. S. Wuu, et. , IEEE Photon. Technol. Lett. 17, pp.288, 2005
    [3] X. Guo and E. F. Schubert, JOURNAL OF APPLIED PHYSICS Vol. 90,      No. 8 , pp.4191, 2001
    [4] J. J. Wierer, et. APPLIED PHYSICS LETTERS VOLUME 78, No. 22, pp. 3379, 2001
    [5] Ya-Ju Lee, et. JOURNAL OF DISPLAY TECHNOLOGY, VOL. 3, NO. 2, pp.118, 2007
    [6] Chen-Fu Chu, et. JOURNAL of APPLIED PHYSICS, vol.95, No. 8, pp. 3916, 2004
    [7] W. S. Wong et. APPLIED PHYSICS LETTERS 77, No. pp.2822, 2000
    [8] W.Y. Lin, et. IEEE PHOTONICS TECHNOLOGY LETTERS, Vol. 17 No. 9, pp.1809, 2005
    [9] Po Han Chen,et. IEEE Photonics technology letters, Vol. 20, pp.845, 2008
    [10] M. Shatalov et., APPLIED PHYSICS LETTERS Vol. 86,No. 20 pp. 1109,2005
    [11] FUMIO MIYASHIRO et., IEEE TRANSACTIONS ON COMPONENTS, HYBRIDS, AND MANUFACTURING TECHNOLOGY, VOL. 13, NO. 2, p.313 JUNE 1990
    [12] YASUHIRO KUROKAWA, et. IEEE TRANSACTIONS ON COMPONENTS, HYBRIDS, AND MANUFACTURING TECHNOLOGY, VOL. CHMT-8, NO. 2, pp.247, 1985
    [13]D. G. Cahill., Review of Scientific Instruments, 61(2), pp.802, 1990
    [14] J.M.Gerken and W.A.Owczarski , Diffusion Welding
    [15] B.R.Garreet , G.F.Blank and A.J.Randine , Hexcel Products,
    Inc.Berkeley , Calif. Mar., pp.20, 1966
    [16]S. C. Hsu,et. Electrochemical and Solid-State Letters,(9) G171, 2006
    [17]M.K. Kelly, et. Appl. Phys. Lett. 69, pp.1749, 1996
    [18]P.R. Taverier, et. J. Appl. Phys. 89, pp. 1527, 2001
    [19]M. Von Allemn and A. Blastter, Laser-Beam Inteactions with Materials, Physical Principles and Applicaions, 2nd ed.,1995
    [20] Y. Xi and E. F. Schubert, Appl. Phys. Lett. Vol.85, pp.2163, 2004
    [21] K.Watari, et. J. Mater. Sci., Vol.26, pp. 4727,1991
    [22]E. Fred Schubert, Light-Emitting Diodes, 2nd ed., 2006
    Advisor
  • G. C. Chi(紀國鐘)
  • Files
  • 962202012.pdf
  • approve immediately
    Date of Submission 2009-07-21

    [Back to Results | New Search]


    Browse | Search All Available ETDs

    If you have dissertation-related questions, please contact with the NCU library extension service section.
    Our service phone is (03)422-7151 Ext. 57407,E-mail is also welcomed.