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Student Number 953903006
Author Chun-Lin Kuo(郭俊麟)
Author's Email Address No Public.
Statistics This thesis had been viewed 1794 times. Download 1413 times.
Department Mechanical Engineering
Year 2007
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title The Synthesis of Cu-Doped Photocatalyst Materials by Chemical Bath Deposition
Date of Defense 2008-07-16
Page Count 77
Keyword
  • CBD
  • Chemical Bath Deposition
  • Photocatalyst
  • Thin film
  • Abstract The visible-active Photocatalyst thin film of AgInS was deposition on ITO glass and doping Cu by CuCl2 solution by chemical bath deposition (CBD).
      The research conditions was change the ph value and reaction time and anneal time of the reaction solution and elevation photo-active of the photocatalyst.
      The material structure analysis by XRD and element analysis by scanning electron microscope (SEM) ;The photocurrent measurement by potentiostat and discussion the element compose by photocurrent effect of photocatalyst.
    Table of Content 中文摘要………………………………………………………………....I                     
    Abstract…………………………………………………………...……...II
    致謝………………………………………………………......................III
    表目錄………………………………………………………………….VII                       
    圖目錄 …………………………………………………………….…VIII
    符號說明……………………………………………………………..…XI
    第一章 緒論………………………………..............................................1
    1.1 前言………………………………………………………......… 1
    1.2 太陽能產氫原理…………….…………………………………..3
    1.3 光觸媒發展歷史………………………………………………...6
    1.4 文獻回顧………………………………………………………...7
      1.4.1 薄膜之製備………………………………………………..7
      1.4.2 化學水浴法原理…………………………………………..8
      1.4.3 以化學水浴法製備半導體薄膜之文獻回顧……………11
        1.4.3.1 Cu2S半導體薄膜文獻回顧……………………....11
        1.4.3.2 AgInS半導體薄膜文獻回顧…………………….12
    1.5 研究目的……………………………………………………….13
    第二章 實驗部分 …………………………………………………......14
    2.1 實驗參數設定及流程…………….………………………....…14
    2.2 實驗藥品材料與實驗裝置.........................................................14
      2.2.1 實驗藥品............................................................................14
        2.2.1.1 化學水浴法中AgInS之薄膜材料.......................14
        2.2.1.2 硫系列薄膜摻雜金屬離子之藥品.......................16
        2.2.1.3 電性分析時所使用之電解質溶液.......................17
      2.2.2 實驗基材............................................................................17
      2.2.3 實驗設備............................................................................17
      2.2.4 實驗步驟............................................................................18
        2.2.4.1 基材清洗...............................................................18
        2.2.4.2 鍍液調配...............................................................19
        2.2.4.3 鍍液反應流程.......................................................20
    2.3 試片完成後處理……………………………………………….22
    2.4 薄膜物性量測分析…………………………………………….22
      2.4.1 XRD(X-ray 繞射儀)……………………………………...22
      2.4.2 SEM(掃描式電子顯微鏡)………………………………..23
      2.4.3 EDS(能量散布質譜儀)…………………………………...24
      2.4.4 UV-visible…………………………………………………24
      2.4.5 Hall Effect Measurement………………………………….25
      2.5 薄膜之電性分析.........................................................................26
    2.6 薄膜厚度分析………………………………………………….27第三章 結果與討論……………………………………………………28
    3.1.1 金屬離子濃度比例對薄膜之影響..........................................29
    3.1.2 燒結溫度不同對於薄膜之影響..............................................31
    3.1.3 鍍膜層數不同對於薄膜之影響..............................................32
    3.1.4 銅摻雜量多寡對薄膜之影響..................................................33
    3.1.5 銅離子溶液之pH值對於薄膜之影響.....................................34
    第四章 結論與未來展望........................................................................36
      4.1 結論.............................................................................................36
      4.2 未來展望.....................................................................................37
    參考文獻..................................................................................................38
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    Date of Submission 2008-07-21

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