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Student Number 943203035
Author Ya-hui Su(蘇雅惠)
Author's Email Address No Public.
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Department Mechanical Engineering
Year 2006
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title An Angstrom-Scale Surface Smooth Technology for Transferred Single-Crystal Silicon Thin Film Layers
Date of Defense 2007-06-15
Page Count 73
Keyword
  • etching
  • Layer Transfer
  • SOI
  • Surface Smooth
  • Abstract The technique of single-crystal Si layer transfer based on using Hydrogen ion implantation has been widely applied in the fabrication of SOI materials possessing nano-scale device layer with single-crystal quality. However, after Si layer transfer process, a lattice-defect region was formed near the surface of transferred Si layer. Therefore, this unwanted region usually needs an extra chemical mechanical polishing (CMP) process to remove it. The main purpose of this study is to avoid the above polishing process as well as simplify the manufacturing processes. In this study, the removal of lattice-defect region generated after layer transfer by Smart-cut® method used etching approach with specific etchants to etch out it at specific temperature. This etching process could also result in surface smooth of the Si transferred layer. Besides, depositing a polysilicon layer as a sacrificial layer has successfully improved the occurrence of channel effect during ion implantation process and then reduced the difference of ion penetration depth to initially modify the surface roughness of the as-split SOI thin film. The surface roughness could be further decreased after using etching approach to remove the lattice-defect region. The above two steps can make the final surface of the transferred single-crystal Si layer smooth and uniform.
    Table of Content 中文摘要..................................................I
    英文摘要.................................................II
    誌謝....................................................III
    目錄.....................................................IV
    圖目錄...................................................VI
    表目錄...................................................IX
    一、 緒論.................................................1
    1.1 研究背景.............................................1
    1.2 研究動機.............................................3
    二、 文獻回顧.............................................4
    2.1 絕緣層矽晶薄膜之特性.................................4
    2.2 絕緣層矽晶圓之製程技術...............................6
    2.3 單晶奈米絕緣層矽薄膜之平滑技術.......................9
    三、 蝕刻機制............................................25
    3.1 乾式蝕刻(Dry Etching)...............................25
    3.2 濕式蝕刻(Wet Etching)...............................27
    3.2.1 等向性濕式蝕刻.....................................29
    3.2.2 非等向性濕式蝕刻...................................30
    四、 實驗方法及步驟......................................37
    4.1 實驗流程............................................37
    4.1.1 試片準備及清洗.....................................37
    4.1.2 結晶矽薄膜沉積.....................................37
    4.1.3 離子佈植...........................................39
    4.1.4 多晶矽蝕刻.........................................40
    4.1.5 晶圓鍵合...........................................40
    4.1.6 薄膜轉移...........................................41
    4.1.7 SOI薄膜表面平坦:粉碎層蝕刻........................41
    4.2 實驗設備與分析儀器..................................42
    五、 實驗結果與討論......................................52
    5.1 多晶矽沉積及蝕刻後狀況..............................52
    5.2 SOI薄膜轉移後表面情形...............................52
    5.3 SOI薄膜粉碎層蝕刻情形...............................54
    六、 結論................................................67
    參考文獻................................................ 69
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    Advisor
  • Tien-Hsi Lee(李天錫)
  • Files
  • 943203035.pdf
  • disapprove authorization
    Date of Submission 2007-07-12

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