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Student Number 942202017
Author Chi-Ting Tsai(u)
Author's Email Address No Public.
Statistics This thesis had been viewed 1362 times. Download 222 times.
Department Physics
Year 2006
Semester 2
Degree Master
Type of Document Master's Thesis
Language English
Title Exploration of new methods for growing Ag films on Au(111) studied by ARPES
Date of Defense 2007-07-06
Page Count 55
Keyword
  • Ag/Au(111) quantum well state
  • Abstract Thin film systems play important roles in technology industry and scientific investigation. However, preparing atomically flat thin films over a macroscopic region is not an easy thing. Our motivation is trying to find a new method for growing flat thin films over a macroscopic region. The system in our investigation we used is Ag/A2u(111) quantum well system. Electron confinement inside Ag films causes quantization of electronic energy states. We use angle resolved photoelectron spectroscopy to investigate the thickness variation of thin films.
       The method we adopted is low temperature deposition and annealing to near room temperature. In the low coverage case, it could use the surface state to resolve the thickness variation. However in the high coverage case, it must use quantum well states to resolve. The results of our experiments show that low temperature deposition and annealing process is a good way to prepare flat thin films. The photoelectron spectra at different temperature measured during the annealing process shows some interesting physical phenomenon. We have a physical model to explain this phenomenon.
    Table of Content 1. Introduction...1
    2. Background...3                    
    2.1 Angle resolved photoelectron spectroscopy...3
    2.1.1 The theory of photoemission...4
    2.1.1(a) The first step...4
    2.1.1(b) The second step...4
    2.1.1(c) The third step...4
    2.1.2 Photoelectron spectroscopy...8
    2.1.3 Angle resolved photoelectron spectroscopy...8
    2.1.4 Analyzer...9
    2.2 Band structure...10
    2.3 Quantum well state...11
    2.4 Ag-Au(111) thin film system...12
    3. Apparatus...21
    3.1 Introduction...21
    3.2 UHV system...21
    3.2.1 Ultra high vacuum...21
    3.2.2 UHV system in NSRRC...24
    3.3 Light source...24
    3.3.1 Synchrotron radiation...24
    3.3.2 He lamp...24
    3.4 Experimental apparatus...26
    3.4.1 Evaporator...26
    3.4.1(a) K-cell...26
    3.4.1(b) EFM3...26
    3.4.2 Sputtering gun...27
    3.4.3 Quartz crystal microbalance...27    
    4. Experiment and Result...34
    4.1 Sample preparation...34
    4.2 Result and discussion...35
    4.2.1(a) Layer resolved by surface state...36
    4.2.1(b) Layer resolved by quantum well state...37
    4.2.2 Thin film crystallization phenomena...38
    5. Conclusion...53
    Reference...54
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    [21] T. Miller, A. Samsavar, G. E. Franklin, and T.-C. Chiang, PRL 61, 1404 (1998)
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    PRB 73, 195413(2006)
    Advisor
  • Dah-An Luh(jw)
  • Files
  • 942202017.pdf
  • approve in 2 years
    Date of Submission 2007-07-17

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