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Student Number 93521047
Author Jia-Shyan Wu(吳家賢)
Author's Email Address 93521047@cc.ncu.edu.tw
Statistics This thesis had been viewed 1652 times. Download 1141 times.
Department Electrical Engineering
Year 2005
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title Investigation of Dual Gate pHEMT and Application on Monolithic Microwave Integrated Circuits
Date of Defense 2006-06-07
Page Count 79
Keyword
  • Dual-Gate pHEMT
  • Abstract ABSTRACT
      The microwave technology is important day by day, and HEMT is important in High frequency circuits. This thesis contents are conferred on single gate and dual gate pHEMT device performance, we also using the dual gate pHEMT in a 2.4GHz microwave amplifier design.
      In chapter two, we discussed the single gate pHEMT DC and RF performance. We used Yang-Long DC measurement and Cold-FET RF measurement to extract external parasitic parameter, and we also extracted intrinsic element parameter by matrix transform to establish small signal model. By the way, we used cascode topology to forecast the maximal power gain cut off frequency (fmax) of dual gate pHEMT.
      In chapter three, we discussed DC performance and RF performance of dual gate EE-mode pHEMT. And we explained the disadvantage of EE-mode pHEMT power performance. In chapter four, we discussed DC、RF and power performance of dual gate ED-mode pHEMT. And we also compared DC、RF and power performance of EE-mode pHEMT and ED-mode pHEMT .
      In chapter five, we used EE-mode pHEMT and ED-mode pHEMT to design a 2.4GHz microwave amplifier. In the final chapter, we summarized the results in this thesis.
    Table of Content 目錄
    第一章 緒論
    1-1 研究背景與動機..................................1
    1-2 論文架構........................................2
    第二章 增強型與空乏型高電子遷移率場效應電晶體元件特性探討
    2-1 簡介..............................................4
    2-2 增強型與空乏型元件直流與高頻特性分析.............4
    2-2-1 增強型與空乏型直流特性分析......................4
    2-2-2 增強型與空乏型高頻特性分析......................14
    2-3 增強型與空乏型元件小訊號模型之建立...............16
    2-3-1 源極電阻的萃取..................................17
    2-3-2 Cold FET量測萃取外部元件參數....................19
    2-3-3 內部本質元件的萃取..............................23
    2-4 雙閘級電晶體之設計與應用.........................25
    第三章 雙閘極增強-增強型元件特性分析
    3-1 簡介..............................................29
    3-2 直流量測結果與分析...............................29
    3-2-1 雙閘級增強-增強型元件直流特性分析...............29
    3-3 高頻與功率量測結果與分析.........................36
    3-3-1 雙閘級增強-增強型元件高頻量測分析...............36
    3-3-2 雙閘級增強-增強型元件功率量測分析...............42
    3-4 結果與討論........................................45
    第四章 雙閘極增強-空乏型元件特性分析
    4-1 簡介..............................................47
    4-2 直流量測結果與分析...............................47
    4-2-1 雙閘級增強-空乏型元件直流特性分析...............47
    4-3 高頻與功率量測結果與分析.........................53
    4-3-1 雙閘級增強-空乏型元件高頻量測分析...............53
    4-3-2 雙閘級增強-增強型元件功率量測分析...............57
    4-4 兩種雙閘極元件之特性分析與比較....................60
    4-4-1 雙閘級增強-空乏型與增強-增強型直流特性分析......60
    4-4-2 雙閘級增強-空乏型與增強-增強型高頻特性分析......62
    4-4-3雙閘級增強-空乏型與增強-增強型元件功率特性分析...65
    第五章 2.4GHZ 微波放大器之設計
    5-1 簡介..............................................68
    5-2 電路設計………………………………………………………68
     5-3 模擬結果與量測結果………………………………………71
    第六章 結論
    參考文獻………………………………………………………………77
    Reference 參考文獻
    [1] M. Aust, H. Wang, M. Biedenbender, R. Lai, D. C. Streit, P. H. Liu, G. S. Dow, and B. R. Allen, “A 94-GHz monolithic power amplifier using 0.1 μm gate GaAs-based HEMT MMIC production process technology,” IEEE Microwave Guided Wave Lett., vol. 5, pp. 12–14, Jan. 1995.
    [2] K. Inoue, M. Nagahara. N. Ui, H. Haematsu, S. Sano and J. Fukaya, “A High Gain L-band GaAs FET Technology for 28V Operation,” 2004 IEEE MTT-S Int. Microwave Symp. Dig., vol. 1, pp. 821-824, June 2004.
    [3]P. K. T Mok, and C. A. T. Salama, , “A novel high-voltage high-speed MESFET using a standard GaAs digital IC process”, IEEE Trans. Electron Devices, vol. 41, pp. 246–250, Feb. 1982.
    [4]R. Thompson, V. Kaper, T. Prunty, J. R. Shealy, “Improvement of high speed blocking voltage by means of metal field plate for GaAs Schottky power rectifiers”, Power Semiconductor Devices and ICs, 1991. ISPSD '91. Proceedings of the 3rd International Symposium on, pp. 159-163, Apr. 1991.
    [5]I. G. Thayne, G. U. Jensen, M. C. Holland, Y. Chen; W. Li; A. Paulsen, J. H. Davies, S. P. Beaumont, P. K. Bhattacharya, “Comparison of 80-200 nm gate length Al0.25GaAs/GaAs/(GaAs:AlAs), Al0.3Ga0.7As/In0.15GaAs/GaAs, and In0.52AlAs/In0.65GaAs/InP HEMTs” IEEE Trans. Electron Devices, vol. 42, pp. 2047–2055, Dec. 1995.
    [6]H. C. Chiu; S. C. Yang, Y. J. Chan, S. H. Chen, W. S. Liu, J.I. Chyi, “The microwave power performance comparisons of AlxGa1-xAs In0.15Ga0.85As (x=0.3, 0.5, 0.7, 1.0) doped-channel HFETs” IEEE Trans. Electron Devices, vol. 51, pp. 156–158, Jan. 2004.
    [7] A.Ezzeddine, and H.Hung, ”The High Voltage/High Power FET,”2003 IEEE MTT-S Int. Microwave Symp. Dig, vol.1,pp. 215-218,June 2003.
    [8] A. Inoue, S. Goto, T. Kunii, T. Ishikawa, Y. Matsuda,”A High Efficiency, High Voltage, Balanced Cascode FET,” IEEE MTT-S Int. Microwave Symp. Dig., pp. 669-672, June 2005.
    [9] T. Tanimoto, I. Ohbu, S. Tanaka, A. Kawai, M. Kudo, A. Terano, T. Nakamura, “Single-voltage-supply highly efficient E/D dual-gate pseudomorphic double-hetero HEMT’s with platinum buried gates ” IEEE Trans. Electron Devices, vol. 45, pp. 1176-1182 June 1998
    [10] Sandeep.R.Bahl and Jesus A del Alamo, “ A New Drain-Current Injection Technique for the Measurement of off-state Breakdown Voltage in FET’s. ” IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 40, No 8, AUGUST 1993.
    [11] Roberto Menozzi, “ Off-State Breakdown of GaAs PHEMTs: Review and New Data ” IEEE TRANSATIONS ON DEVICE AND MATERIALS RELIABOLITY, Vol.4, No 1, MARCH 2004.
    [12] Mark H. Somerville, Roxann Blanchard, Student Member, IEEE, Jesus A. del Alamo, Senior Member, IEEE, K. George Duh, and P.C.Chao, “ On-state Breakdown in Power HEMT’s: Measurements and Modeling” IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 46, No. 6, June 1999.
    [13] G. Dambrine et all, “A new method to determining the FET small-signal circuit” IEEE Trans. Microwave Theory Tech., Vol. 36, No 7, pp 1151 1988.
    [14] L. Yang et.all, “New method to measure source and drain resistance of the GaAs MESFET Model” IEEE Electron Device Lett” Vol EDL-7, pp 75-77, 1986.
    [15] W. Curtice et all, “A nonlinear GaAs FET model for uses in the design of output circuit for power amplifiers” IEEE Trans. Microwave Theory Tech. , Vol. MTT-33 No. 12, pp. 183, 1985.
    [16] 王志偉“增強型異質結構高速移導率電晶體大信號模型之建立及其在微波放大器之應用”國立中央大學電機工程研究所論文,pp.41-57 民國91年。
    [17] L.Lee, W.Long, S.Strahle, D.Geiger, B.Henle, H.Kunzel, E.Mittermeier, U.Erben, U.Spitzberg and E.Kohn, “Dual-gate HFET with closely spaced electrodes on InP”, Proceedings of the IEEE/Cornell Conference on advanced concepts in High Speed Semiconductor Devices and Circuits, pp. 522-531,Ithaca, New York,1995. 
    Advisor
  • Yi-Jen Chan(詹益仁)
  • Files
  • 93521047.pdf
  • approve in 2 years
    Date of Submission 2006-06-23

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