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Student Number 93323047
Author Li-Yun Wu(吳麗雲)
Author's Email Address 93323047@cc.ncu.edu.tw
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Department Mechanical Engineering
Year 2005
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title Wet etching of patterned sapphire substrates
Date of Defense 2006-07-05
Page Count 81
Keyword
  • none
  • Abstract Abstract
    In this study, we employed a chemical wet etching method in building the trench pattern on the sapphire substrates. Compared to dry etching,
    wet etching had several advantages, such as simpler process, higher etching rate and throughput, and the cost is much lower. Sapphires had excellent physical and chemical stability, and it’s hard to react with the
    chemical solutions. Here we had already succeeded in etching the sapphire substrates, and finding out the suitable chemical solutions and working temperature to obtain the optimal etching rate and surface quality.
    We also discussed the relationship between etching morphology and sapphire orientations.
    GaN light-emitting diodes were deposited on pattern and non-pattern sapphire substrates to reveal the thin film quality and optical performance. Experimental results show the treading dislocation density of epitaxy
    layer was decreased obviously. A further Photoluminescence(PL)was measured and peak intensity was found to enlarge substantially for
    the LED sample on the pattern sapphire. This could attribute to the reduction of dislocation density, and the multiple scattering of the
    emission light at the GaN/patterned sapphire interface changes the angle of propagation of the confined light.
    Table of Content 目錄                      頁次
    摘要············································I
    英文摘要······································· II
    致謝·········································· III
    目錄··········································· IV
    圖表目錄····································· VIII
    第一章、序論·····································1
    1.1 前言······································1
    1.2 材料簡介··································5
    1.2.1 氧化鋁單晶······························5
    1.2.2 藍寶石基板與氮化鎵磊晶薄膜結構··········5
    1.2.3 貫穿式差排形成機制與影響················7
    1.3 藍寶石之蝕刻技術························· 12
    1.3.1 乾式蝕刻技術··························· 12
    1.3.2 濕式蝕刻技術··························· 13
    1.3.3 製作圖案化藍寶石之目的··················15
    1.4 光學理論基礎······························15
    1.5 文獻回顧··································17
    1.5.1 藍寶石蝕刻之相關文獻··················· 17
    1.5.2 圖案化藍寶石基板之相關文獻············· 18
    1.6 研究動機與目的····························20
    第二章、實驗方法與檢測························21
    2.1 實驗設備··································21
    2.1.1 電漿輔助化學化學氣相沉積系統··········· 21
    2.1.光罩對準曝光機··························· 22
    2.1.3 高密度電漿蝕刻系統······················22
    2.1.4 自動控制型高溫加熱爐·········· 23
    2.2 實驗流程································· 25
    2.3 圖案化藍寶石基板之製作····················30
    2.3.1 遮罩材料之選擇························· 30
    2.3.2 製作二氧化矽遮罩層····················· 30
    2.3.3 藍寶石之濕式蝕刻······················· 31
    2.4 材料檢測··································32
    2.4.1 掃描式電子顯微鏡······················· 32
    2.4.2 原子力顯微鏡分析技術··················· 33
    2.4.3 光激發光光譜分析······················· 34
    第三章 結果與討論··············· 38
    3.1 濕式蝕刻之機制····························38
    3.2 濕式蝕刻製程參數與蝕刻速率之關係··········39
    3.2.1 蝕刻液濃度配比對蝕刻速率的影響··········46
    3.2.2 最高藍寶石蝕刻製程條件··················48
    3.2.3 藍寶石蝕刻速率與二氧化矽之選擇比········48
    3.3 圖案化藍寶石基板對磊晶品質及發光效率之影響57
    第四章 結論···················61
    參考文獻······································63
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    Advisor
  • J. C. Chen(陳志臣)
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    Date of Submission 2006-07-08

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