Title page for 92521057


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Student Number 92521057
Author Chi-Lun Kao(高啟倫)
Author's Email Address 92521057@cc.ncu.edu.tw
Statistics This thesis had been viewed 3254 times. Download 4301 times.
Department Electrical Engineering
Year 2004
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title Large Area GaN-Based Flip-Chip Light-Emitting Diode
Date of Defense 2005-06-30
Page Count 49
Keyword
  • ESD
  • Flip-Chip
  • LED
  • Abstract   本論文以配合磊晶於藍寶石基板之氮化鎵材料為主,開發覆晶式發光二極體之製程技術為目的,提升大面積氮化鎵發光二極體之輸出功率與效率。在覆晶子基板方面,使用以矽為主要材料,搭配氮化矽、鋁等高導熱材料,製作具有良好散熱特性之子基板,並以離子佈植之方式於高濃度P型矽基板內植入磷離子型成N型區域,形成一齊納二極體,並且與發光二極體反向並聯達到靜電釋放保護之效果。在覆晶接合方面,使用了兩種方法:以金/錫合金做為凸塊之焊料接合法,以及使用金球做為凸塊之熱超音波接合法為覆晶接合之方法,皆成功將發光二極體元件與覆晶子基板接合。
      以鈀/氧化鎳/鋁/鈦/金作為高反射p型歐姆接觸層,波長470 nm之大面積(~1mm2)氮化鎵發光二極體於覆晶接合後,光強度為使用鎳/金透明電極之傳統正面發光二極體之1.5倍。未封裝之覆晶式發光二極體於350 mA光強度約為80 mW,最大光強度於800 mA為120 mW。
    Table of Content 第一章 導論 1
    第二章 大面積覆晶發光二極體製程 4
    2.1 發光二極體製程 4
    第三章 覆晶子基板 12
    3.1 覆晶技術簡介 12
    3.2 覆晶子基板之材料選擇 14
    3.3 靜電釋放之傷害與防止方法 15
    3.4 覆晶子基板製程 23
    3.5 結論 27
    第四章 覆晶接合 28
    4.1 簡介 28
    4.2 焊料接合製程 29
    4.3 熱超音波接合製程 35
    4.4 結論 38
    第五章 光電特性量測與分析 39
    第六章 結論 47
    參考文獻 50
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    Advisor
  • Jen-Inn Chyi(綦振瀛)
  • Files
  • 92521057.pdf
  • approve immediately
    Date of Submission 2005-07-20

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