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Student Number 92521039
Author Chao-Hsi Wu(吳昭羲)
Author's Email Address 92521039@cc.ncu.edu.tw
Statistics This thesis had been viewed 2072 times. Download 1669 times.
Department Electrical Engineering
Year 2004
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title Mesa Type SiGe HBTs Fabrication and Analysis
Date of Defense 2005-06-23
Page Count 89
Keyword
  • analysis
  • hbt
  • mesa type
  • sige
  • Abstract 本論文主要提出以平臺式(Mesa-type)非自我對準(non self-aligned)的製程方法製作完成矽鍺異質接面雙載子電晶體(Silicon Germanium Heterojunction Bipolar Transistors;SiGe HBTs)。並對電晶體進行量測、分析、模擬與討論。所有元件製程均於國立中央大學光電科學研究中心完成;之後進行元件的特性量測。量測部份主要包括元件直流特性、高頻特性、溫度直流特性;量測的射極面積主要有AE = 75×75 μm2,AE = 3×12 μm2和AE = 4×12 μm2,之後對量測結果進行討論和分析。模擬部分以模擬軟體TMA MEDICI進行2-D(two-dimensional)結構模擬。先對量測結果進行直流特性的fitting,之後設計並模擬不同鍺成份(different Ge composition)對元件特性之影響,並對結果進行討論。
      量測所得到的AE = 75×75 μm2元件,在IC = 10.3mA時的電流增益約為83,崩潰電壓BVCEO>5V。AE = 4×12 μm2之最大直流增益(βmax)為39.3,fT為10.43GHz,fmax為2.85GHz,BVCEO>5V。AE = 3×12 μm2之最大直流增益為34.8,fT為8.95GHz,fmax為2.55GHz,BVCEO>5V。
    Table of Content 第一章導論…………………………………………………………… 1
    1.1研究動機……………………………………………………… 1
    1.2SiGe HBT的優缺點…………………………………………… 3
    1.3SiGe HBT的應用……………………………………………… 5
    1.4研究摘要……………………………………………………… 7
    第二章矽鍺異質接面雙載子電晶體材料特性及製程……………… 8
    2.1SiGe 材料介紹……………………………………………… 8
    2.1.1成長厚度與晶格的關係……………………………………… 8
    2.1.2能帶結構………………………………………………………11
    2.2SiGe HBT結構與元件工作原理介紹…………………………13
    2.2.1SiGe HBT結構…………………………………………………13
    2.2.2元件工作原理…………………………………………………15
    2.3SiGe HBT元件製作流程與元件佈局…………………………25
    2.3.1元件製程………………………………………………………25
    2.3.2元件佈局………………………………………………………39
    第三章矽鍺異質接面雙載子電晶體特性量測及分析………………41

    3.1直流與高頻特性的量測方法…………………………………41
    3.2電晶體特性量測………………………………………………43
    3.2.1電晶體直流特性量測…………………………………………43
    3.2.2電晶體高頻特性量測…………………………………………47
    3.3電晶體溫度特性量測及分析比較……………………………55
    3.4異質接面雙載子電晶體之特性分析…………………………61
    3.4.1硼離子擴散效應(Boron outdiffusion effect)………… 61
    3.4.2集極電流飽和(current saturation in Collector 
                        region)………………………………………62
    3.5結果討論………………………………………………………66
    第四章矽鍺層中鍺成份分佈變化模擬與分析………………………67
    4.1元件結構之特性模擬…………………………………………67
    4.1.1元件結構模擬…………………………………………………67
    4.1.2模擬結果與討論………………………………………………72
    4.2鍺成份分佈模擬與分析………………………………………77
    4.2.1鍺成份分佈設計………………………………………………77
    4.2.2模擬結果與討論………………………………………………80
    4.3結果討論………………………………………………………85
    第五章結論……………………………………………………………86
    參考文獻…………………………………………………………………………………………87
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    [13]Liang-Hung Lu , Saeed Mohammadi , Zhenqiang Ma , George E.Ponchak, Samuel A. Alterovitz , Karl M. Strohm , Johann-Friedrich Luy , Pallab Bhattacharya and Linda P. B. Katehi, “SiGe Power Heterojunction Bipolar Transistors(HBT’s) Fabricated by Fully Self-Aligned Double Mesa Technology,” IEEE MTT-S Int. Microwave Symp.Dig, vol. 3, pp.1709-1712, Jun. 2001.
    [14]John D. Cressler, H. Comfort, Emmanuel F. Crabbe, Gary L. Patton, Johannes M. C. Stork, Jack Y. C. Sun and Bernard S. Meyerson, “On the Profile Design and Optimization of Epitaxial Si- and SiGe-Base Bipolar Technology for 77K Application-part I: Transistor DC Design Considerations,” IEEE Transaction On Electron Devices, vol.40, no. 3, pp.525-541, Mar. 1993.
    [15]S.M. Sze, Modern Semiconductor Device Physics. John Wiley & Sons, 1998.
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    [18]Sandip Tiwari, “A New Effect at High Currents in Heterostructure Bipolar Transistors,” IEEE Electron Device Letters, vol. 9, no. 3, pp.142-144, Mar. 1988.
    [19]Technology Modeling Associates, Inc., TMA MEDICI Two Dimensional Device Simulation Program, User’Manual.
    [20]羅闐軒, “應用於混頻器之矽鍺異質接面雙載子電晶體之設計與模擬” 碩士論文, 國立清華大學, 民國88年。
    Advisor
  • Yue-Ming Hsin(辛裕明)
  • Files
  • 92521039.pdf
  • approve immediately
    Date of Submission 2005-06-30

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