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Student Number 92246018
Author Shih-Liang Ku(古士良)
Author's Email Address No Public.
Statistics This thesis had been viewed 1108 times. Download 10 times.
Department Optics and Photonics
Year 2009
Semester 2
Degree Ph.D.
Type of Document Doctoral Dissertation
Language zh-TW.Big5 Chinese
Title The research of infrared optical thin film
Date of Defense 2010-05-28
Page Count 115
Keyword
  • Ion beam
  • Thin film
  • Abstract This thesis focus on the mid-infrared optical thin films including germanium (Ge), silicon monoxide (SiO) and silicon nitride (SiN) thin films. The difference from the conventional thermal evaporation process, these films were prepared by ion beam assisted deposition (IAD) process and expected to obtain the desirable properties at lower temperature. These films were analyzed using the infrared variable angle spectroscopic ellipsometry, Fourier transform infrared spectrometry, UV–NIR spectrophotometer, X-ray photoelectron spectrometry, scanning electron microscopy, atomic force microscopy, X-ray diffraction transmission electron microscopy and nano indenter. The influences of ion bombardment on the structural properties, such as composition, crystalline, and microstructure, and on the mid-infrared optical properties of these films were investigated.
    The results showed that compared the conventional thermal evaporation process, the mid-infrared optical and structural properties of Ge and SiO thin films could be effectively improved by using the selective conditions of the ion beam voltage and current density in the IAD process. In addition, the SiN thin film with good optical property could be obtained using the IAD technique. Furthermore, the mid-infrared edge filter and anti-reflection coating, which were prepared by using the IAD process, also exhibited the desirable optical performance. These results presented in this work indicated that the IAD technique would have a positive effect on the optical and structural properties of the infrared thin films.
    Table of Content 目  錄
    中文摘要Ⅰ
    AbstractII
    誌  謝III
    目  錄IV
    圖 目 錄VII
    表 目 錄X
    符 號 表XⅠ
    第一章 緒論1
    1.1 研究動機2
    1.2 研究方法3
    1.3 文獻回顧3
    第二章 基本理論6
    2.1 薄膜成長理論6
    2.2 結構區模型10
    2.3 電子槍蒸鍍13
    2.4 離子束助鍍15
    第三章 研究方法18
    3.1 實驗設備18
    3.1.1 材料與基板的選用18
    3.1.2 濺鍍機架構18
    3.1.3 離子源架構20
    3.1.4 實驗參數22
    3.2 量測方法與儀器24
    3.2.1 紅外變角度光譜式橢圓偏光儀24
    3.2.2 傅氏轉換紅外線光譜儀27
    3.2.3 紫外-近紅外光光譜儀27
    3.2.4 X-ray光電子能譜儀28
    3.2.5 掃描式電子顯微鏡28
    3.2.6 原子力顯微鏡29
    3.2.7 X-ray 繞射儀31
    3.2.8 穿透式電子顯微鏡31
    3.2.9 奈米壓痕測試機33
    第四章 結果與討論35
    4.1Ge單層薄膜之特性分析35
    4.1.1 Ge薄膜的光學性質35
    4.1.2 Ge薄膜的結構性質39
    4.2 SiO單層薄膜之特性分析47
    4.2.1 SiOx薄膜的結構性質47
    4.2.2 SiOx薄膜的光學性質63
    4.3 SiN單層薄膜之特性分析65
    4.3.1 SiNx薄膜的結構性質65
    4.3.2 SiNx薄膜的光學性質76
    4.4 多層膜的鍍製85
    4.4.1抗反射膜設計與鍍製86
    4.4.2截止濾光鏡設計與鍍製89
    第五章 結論91
    參考文獻94
    論文著作101
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    Advisor
  • Cheng-Chung Lee(李正中)
  • Files
  • 92246018.pdf
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    Date of Submission 2010-06-02

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