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Student Number 91521043
Author Chao-Hung Kuo(L)
Author's Email Address No Public.
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Department Electrical Engineering
Year 2003
Semester 2
Degree Master
Type of Document Master's Thesis
Language English
Title An Equivalent Circuit Model of Quantum Mechanics and its Investigation to Device Simulation
Date of Defense 2004-06-24
Page Count 42
Keyword
  • Device Simulation
  • Equivalent Circuit Model
  • Quantum Mechanics
  • Abstract   In this thesis, we will study the quantum mechanics and its simulation on semiconductor devices. In order to handle the quantum mechanics simulation, we first need an efficient eigenvalue and eigenvector solver to help us solve the Schrödinger wave equation. This efficient solver in this thesis is called QM-solver. It is useful for us to study the quantum mechanics specifically by getting the eigenvalue and eigenvector from the QM-solver of any potential function. And the second, we use the equivalent circuit model of semiconductor device with quantum mechanics to observe the charge distribution in the quantum well.
    Table of Content 1. Introduction........................................................1 
    2. The Development of Quantum Mechanics Solver.........................3
      2.1 Introduction....................................................3
      2.2 The Zero-Determinant Method.....................................4
      2.3 The Equivalent Circuit Model of Schrödinger Equation............6
    3. The Simulation Results of the QM-Solver............................11
      3.1 The Infinite Quantum Well......................................11  
      3.2 The Simple Harmonic Oscillator.................................16
      3.3 The Potential-Energy Barrier...................................19
      3.4 The Triangular and the Two-Well Forms of Quantum Well..........22
    4. The Electron Distribution in MOS Capacitor with Quantum Effects
      by the QM-Solver...................................................25
      4.1 The Equivalent Circuit Model of Decoupled Method...............28
      4.2 Physical Fundamentals of the Electron Distribution.............32
      4.3 The Simulation of MOS Capacitor................................33
    5. Conclusion.........................................................41
    Reference [1] D. A. Neamen, Semiconductor Physics & Devices, Chapter 2, McGraw-Hill,  Inc., 1997.
    [2] J. Sanny and W. Moebs, University Physics, Chapter 42, Times Mirror Higher Education Group, Inc., 1997.
    [3] T. Janik and B. Majkusiak , Analysis of the MOS transistor based on the self-consistent solution to the Schrodinger and Poisson equations and on the local mobility model, IEEE Trans. Electron Devices, vol.45, p.1263 V 1271, 1998.
    [4] H. C. Casey, Devices For Integrated Circuit, Chapter 7, John Wiley & Sons Inc., 1999.
    [5] A. K. Ghatak, K. Thyagarajan, M.R. Shenoy A novel numerical technique for solving the one-dimensional Schroedinger equation using matrix approach-application to quantum well structures, IEEE Journal on Quantum Electronics, vol.24, p.1524 V 1531, 1988.
    [6] S. Selberherr, Analysis and Simulation of Semiconductor Devices, New York: Springer, 1984.
    [7] C.-L. Teng, An equivalent circuit approach to mixed-level device and circuit simulation, M. S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China, Jun. 1997.
    [8] J. W. Lee, An equivalent circuit model for decoupled method in semiconductor device simulation, M. S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China, Jun. 2002.
    Advisor
  • Yao-Tsung Tsai(`o)
  • Files
  • 91521043.pdf
  • approve immediately
    Date of Submission 2004-07-06

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