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Student Number 89521038
Author Shuo-Bing Su(蘇碩彬)
Author's Email Address s9521038@cc.ncu.edu.tw
Statistics This thesis had been viewed 1801 times. Download 1750 times.
Department Electrical Engineering
Year 2001
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title A Large-Signal Model Establishment and Power Amplifier Application of HBTs
Date of Defense 2002-06-17
Page Count 84
Keyword
  • HBT
  • large signal model
  • power amplifier
  • Abstract   在本論文中,利用一回授電流源加在Gummel-Poon本質模型的基射極間模擬異質接面雙極性電晶體的熱效應,且加入元件之寄生效應以建立異質接面雙極性電晶體大訊號等效電路模型,對於直流、交流和非線性特性都能準確的模擬,此模型可以應用於一般實際的微波電路設計。
      利用單晶微波積體電路的製程,用InGaP/GaAs HBT設計出一個應用於5.2 GHz WLAN系統的兩級功率放大器,。
    利用異質接面雙極性電晶體的基射極接面之二極體配合一並聯電容組合一主動偏壓電路,在不犧牲額外的功率損耗情形下,取代傳統電阻式偏壓方式,設計出一個單級功率放大器,可以改善功率放大器非線性因素—增益壓縮。
    Table of Content 第一章 導論…………………………………………………………1
    第二章 異質接面雙極性電晶體大訊號模型之建立………3
    §2.1 簡介…………………………………………….……………… 3
    §2.2異質接面雙極性電晶體元件特性……………………………..4
    §2.3異質接面雙極性電晶體大訊號電路模型之立………………..5
    §2.3.1異質接面雙極性電晶體之大訊號型……………………5
    §2.3.2 Gummel-Poon直流模型之介紹…………………………6
    §2.3.3寄生電阻之量測及萃取………………………………….8
    §2.3.3.1射極與集極寄生電阻…………..…………………8
    §2.3.3.2基極寄生電阻…………………….….…………..10
      §2.3.4順向與逆向Gummel plot參數之萃取…………………12
      §2.3.5共射極直流輸出特性之模擬…………….………..……16
      §2.3.6接面電容參數之模擬…………….……………………..18
      §2.3.7電晶體傳輸時間之模擬……………….………………..22
      §2.3.8元件寄生參數之萃取……………………………………26
      §2.3.9大訊號模型完成……………….……………..……….....29
      §2.3.10功率特性之模擬……….……………………………….30
        §2.3.10.1負載-拉移量測(Load-pull measurement).…..31
        §2.3.10.2 輸入功率與輸出功率關係之模擬……………..32
    §2.3.10.3 三階截斷點IP3(Third-order intercept point).33
    §2.4 結果討論………………………………………………………...35
    第三章 單晶微波積體電路之5.2GHz功率放大器設計….36
    §3.1功率放大器簡介……………………………..………………….36
    §3.2 設計原理……………………………………………………….38
    §3.2.1 偏壓點選擇設計原理………………………….………..38
    §3.2.2 電路穩定性………………………………………………40
    §3.2.3 功率增益(power gain)…………………………..……42
    §3.2.4 功率非線性考量…………………………..……………..46
    §3.3 功率放大器之設計……………………………………………..47
    §3.3.1功率放大器之設計規格…………………………………47
    §3.3.2功率級之設計………………………………………..…...48
    §3.3.3增益級之設計………………………………………..…...50
    §3.3.4 級間匹配………………………………………..…..……51
    §3.3.5 兩級功率放大器模擬結果………………..…..………...52
    §3.3.6 電路佈局…………………………..……………………..54
    §3.4功率放大器量測結果…………………………………………55
    §3.4.1 小訊號S參數…………………………………………………55
    §3.4結論………………………………………………………………57
    第四章 主動偏壓電路線性器之設計…………………………..59
    §4.1 簡介……………………………………………………………..59
    §4.2功率放大器之非線性參數……………………………………...59
      §4.2.1 AM/AM與AM/PM…………………………………..59
       §4.2.2 鄰近通道功率比例…………………………………...60
      §4.2.3 輸出三次交叉點………………………………………...61
    §4.3 二極體線性器原理…………………..…………………………62
    §4.4 主動偏壓電路原理……………………………………………..65
    §4.5 主動偏壓電路功率放大器之設計……………………………..66
    §4.6 量測結果…………………………………………………….…..71
    §4.7 結論………………………………………………………….…..75
    第五章 結論………………………………..………………………..76
    Reference [1]Ke Lu, Philip A. Perry, and Thomas J.Brazil,“A New Large-signal AlGaAs/GaAs HBT Model Including Self-heating Effects, With Corresponding Parameter-extraction Procedure,”IEEE Transactions on Microwave Theory and Techniques, vol. 43, No. 7, July. 1995.
    [2]Q.M.Zhang, Huntao Hu, John Sitch, R. K. Surridge, and Jimmy M.Xu,“A New Large-signal HBT Model,”IEEE Transactions on Microwave Theory and Techniques, vol. 44, No. 11, Nov. 1996.
    [3]Apostolos Samelis, and Dimitris Pavlidis,“Analysis of the Large Signal Characteristics of Power Heterojunction Bipolar Transistors Exhibiting Self-heating Effects,”IEEE Transactions on Microwave Theory and Techniques, vol. 45, No. 4, APRIL. 1997.
    [4]Ce-Jun Wei, James C.M. Hwang, Wu-Jing Ho, and J.Aiden Higgins, “Large-signal Modeling of Self-heating, Collector Transit Time, and RF-breakdown Effects In Power HBT’s,”IEEE Transactions on Microwave Theory and Techniques, vol. 44, No. 12, Nov. 1996.
    [5] John Dupuis,Rached Hajji, Fadhel M. Ghannouchi,Khaled Saab, and Sylvain Lavallée“ A new DC model of HBT’s including self-heating effect suitable for circuit simulators,”IEEE Transactions on Electron Devices, vol. 42, No. 12, Dec. 1995
    [6] 朱昌榮,“ 異質接面雙極性電晶體之等效電路模型建立與其在射頻電路之應用,”碩士論文, 國立中央大學, 1999.
    [7] “Advanced Design System 1.3 User’s Manual,” Agilent Technologies innovating the HP Way, Nov. 1999.
    [8] “High-Frequency Model Tutorial,” vol.1. ICCAP manual.
    [9] William Liu, “Handbook of III-V Heterojunction Bipolar Transistors,” John Wilely & Sons Inc., 1999.
    [10] Giuseppe Massobrio, Paolo Antognetti, “Semiconductor Device Modeling with SPICE,” McGraw-Hill. Inc., 1993.
    [11] Behzad Razavi,“RF Microelectronics ,”Prentice-Hall, Inc., 1998
    [12] Steve C. Cripps,“RF Power Amplifiers for Wireless Communications,”Artech House, Inc., 1999.
    [13] David M. Pozar,“Microwave Engineering,”AddisonWesley, 1990.
    [14] Guillermo Gonzalez,“Microwave Transistor Amplifier Analysis and Design,”Prentice-Hall, Inc., 1998.
    [15] Y. S. Noh, C. S. Park, “Linearized InGaP/GaAs HBT MMIC Power Amplifier with Active Bias ircuit,” Radio and Wireless Conference, 2001. RAWCON 2001. IEEE , pp.249, 2001.
    [16] T. Yoshimasu, M. Akagi, N. Tanba, and S. Hara, “A Low Distortion and High Efficiency HBT MMIC Power Amplifier with A Novel Linearization Technique for Pi/4 DQPSK Modulation,” Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, pp.45, 1997
    [17] Y. S. Noh, T. W. Lee, C.S. Park, “Linearized high efficient HBT power amplifier module for L-band application,” Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest , pp.197 , 2001.
    Advisor
  • Yi-Jen Chan(詹益仁)
  • Files
  • 89521038.pdf
  • approve in 2 years
    Date of Submission 2002-07-15

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