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Student Number 88521008
Author Jian-Ming Gan(甘佳民)
Author's Email Address No Public.
Statistics This thesis had been viewed 2080 times. Download 1630 times.
Department Electrical Engineering
Year 2000
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title 氮化鋁中間層對氮化鋁鎵/氮化鎵異質接面場效電晶體之影響
Date of Defense 2001-07-17
Page Count 63
Keyword
  • AlGaN/GaN
  • AlN
  • GaN
  • HFET
  • interlayer
  • Abstract none
    Table of Content 第㆒章導論
    1.1 回顧Ⅲ-Ⅴ族半導體於高速元件的發展 1
    1.2 氮化鎵材料介紹 2
    第㆓章元件之原理與製程
    2.1 高速電子遷移率場效電晶體工作原理及材料特性討論 4
    2.2 AlGaN/GaN 異質接面場效電晶體的製程 7
    第㆔章元件量測與結果分析
    3.1 磊晶結構及材料分析 14
    3.1.1 元作結構 14
    3.1.2 霍爾效應量測 18
    3.2 直流量測 20
    3.3 高頻量測 29
    第㆕章AlN interlayer 對元件的影響
    4.1 C-V量測 45
    4.2差排於磊晶片表面之影響 55
    第五章結論 59
    Reference 61
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    Advisor
  • Jen-Inn Chyi(綦振瀛)
  • Files
  • 88521008.pdf
  • approve immediately
    Date of Submission 2001-07-17

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