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Student Number 88321047
Author Sung-huei Kuo(郭松輝)
Author's Email Address No Public.
Statistics This thesis had been viewed 1330 times. Download 954 times.
Department Chemical and Materials Engineering
Year 2000
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title 負載式CoB非晶態合金觸媒製備與催化性質探討
Date of Defense 2001-06-22
Page Count 80
Keyword
  • 氫化
  • 金屬-硼
  • 非晶態合金
  • Abstract 本研究以環己烯氫化為模式反應,有系統地探討負載式CoB/SiO2非晶態合金觸媒製備之最適條件,並針對不同官能基烯基鍵與羰基鍵的氫化及苯環內共振烯基鍵的氫化做一探討,並與非負載式CoB觸媒與傳統Co觸媒做一比較。
    以含浸-化學還原法製備負載式CoB/SiO2觸媒,最適製備條件為,以氯化鈷為先驅鹽,以臨濕含浸法含浸於SiO2擔體,經100℃乾燥過夜與200℃中溫焙燒後,將硼氫化鈉以6 ml/min及B/Co=4.5(莫爾比)滴定還原製得。
    CoB/SiO2觸媒整體的元素組成為Co/B=1.2~1.8,低於非負載式CoB觸媒中Co/B=2~3,硼元素含量高於非負載式CoB觸媒;CoB/SiO2觸媒在500℃以下熱處理無明顯X-ray繞射結晶峰,500℃以上始有Co晶相形成。 CoB/SiO2觸媒之氫-程溫脫附尖峰溫度大致相同為530℃,10wt%CoB/SiO2有最大氫吸附量;添加促進劑Cr、Th或W之CoB/SiO2觸媒氫-程溫脫附尖峰向低溫偏移至500℃,削弱氫的吸附強度,Cr與Th的添加能促進Co的分散性,W的添加則不利Co的分散性。
    在液相氫化反應中,鏈狀單一官能基氫化大致以接近氯化鈷單層負載量的10wt%CoB/SiO2最佳,環狀化合物烯基鍵氫化屬結構敏感型反應,則以20wt%CoB/SiO2最佳。
    在等Co含量下,除丁醛之氫化外,CoB/SiO2觸媒活性大都不及CoB觸媒,添加促進劑之CoB/SiO2觸媒活性則可以媲美CoB觸媒。
    CoB/SiO2觸媒活性不如Co/SiO2觸媒,但有較佳的耐硫毒化特性,添加促進劑之CoB/SiO2觸媒雖有好的活性,但卻不具耐硫毒化特性。
    Table of Content 目 錄
    第一章 緒論
    Reference 18.Y. Z. Chen, and J. S. Wu, “Chemisorption and Catalytic Properties of Cobalt Boride Catalysts
    Advisor
  • Yin-Zu Chen(陳吟足)
  • Files
  • 88321047.pdf
  • approve immediately
    Date of Submission 2001-06-22

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