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Student Number 86324024
Author Yu-Min Shiu(許裕民)
Author's Email Address No Public.
Statistics This thesis had been viewed 343 times. Download 10 times.
Department Electrical Engineering
Year 1998
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title The large signal model of Si BJT and it's application in high frequency circuits
Date of Defense
Page Count 76
Keyword
  • bipolar junction transistor
  • high frequency circuit
  • large signal model
  • Abstract The direction of our research in this thesis is based on the empirical model. In chapter two, some bipolar junction transistors ( AT-42000 ) produced by HP corp. were measured, and the corresponding large signal model for high frequency range was successfully built (predicted up to 10 GHz). Based on the Gummel-Poon model, our large signal model adjusts general equivalent circuit model of bipolar transistors to simulate the parasitic effect of the BJT under high frequency operation. Then, in chapter three, a 900MHz amplifier was designed and fabricated based on the large signal model that has been built previously in chapter two ; in chapter four, a voltage controlled oscillator centered around 2.2 GHz was designed and realized with measurement results quite match to the simulation results. Therefore, this large signal model can be concluded to provide all kinds of information for circuit designers such as I-V, S-parameters, P1dB, Pout, output power spectrum, dynamic load line, and output power contour while small signal model can only provide S-parameters.
    In summary, circuit simulation with the large signal models in the text can exactly enhance the credibility of the simulation procedure such that money cost and time consumption for the development of the prototype circuit can be minimized.
    Table of Content 第一章 序言..............................................................................1
    1.1 雙極性電晶體的潛力......................................................2
    1.2 論文綱要............................................................................2
    第二章 雙極性電晶體的大訊號模型及建立......................4
    2. 1 雙極性電晶體大訊號模型..............................................4
    2.1.1 雙極性電晶體大訊號模型的重要性...........................4
    2. 1.2 電晶體大訊號模型的種類...........................................5
    2.1.3 未來趨勢..........................................................................8
    2. 2 雙極性電晶體大訊號模型的建立.................................8
    2.2.1 簡介...................................................................................8
    2. 2.2 大訊號模型之建立........................................................9
    2.2.3 雙極性電晶體中的電容..............................................12
    2. 2.4 完整的大訊號模型......................................................14
    2.3 參數的萃取.......................................................................15
    2. 3.1 元件的高頻量測和De-embedding..............................15
    2.3.2 直流參數的萃取...........................................................17
    2. 3.3 接面電容參數的萃取.................................................20
    2.3.4 各級寄生電阻的萃取..................................................22
    2. 3.5 載子傳輸時間的萃取.................................................24
    2.3.6 完整的大訊號模型......................................................26
    2.4 MDS和Hspice的比較....................................................27
    2.5 低頻雜訊頻譜的量測..................................................28
    2.6 結論................................................................................32
    第三章 900MHz放大器之研製..........................................36
    3. 1 S參數的定義.................................................................36
    3.2 微波放大器之設計原理.............................................37
    3.2.1 放大器的基本原理...................................................37
    3.2.2 穩定性的考量............................................................38
    3.2.3 功率增益(Power Gain)...............................................40
    3.2.4 阻抗匹配網路(Impedance Matching Network).........43
    3.3 900MHz放大器之電路設計........................................44
    3.3.1 被動元件等效電路模型的建立..............................45
    3.3.2 微波放大器設計流程...............................................46
    3.3.3 直流偏壓網路(DC Bias Network).............................47
    3.3.4 900MHz放大器製作與量測.....................................48
    第四章 電壓控制振盪器之研製........................................53
    4.1 Varactor model之建立....................................................53
    4.2 VCO模擬設計................................................................56
    4.2.1 振盪器的基本原理....................................................56
    4.2.2 相位雜訊(Phase Noise)...............................................60
    4.2.3 諧振電路.....................................................................62
    4.2.4 FR4板子上振盪器電路設計....................................65
    4.2.5 氧化鋁基板上振盪器電路設計..............................70
    第五章 總結...........................................................................73
    參考文獻.................................................................................75
    Reference [1] "MEDICI user*s manual", Technology Modeling Associates, Inc., 1995.
    [2] R.F. Pierret, "Semiconductor Device Fundamentals", Addison Wesley, 1996.
    [3] "HP 85190 series high-frequency IC-CAP software user*s manual", Hewlett Packard, 1995.
    [4] G. Massobrio, P. Antognetti, "Semiconductor Device Modeling with SPICE 2nd ed.", McGraw Hill, 1993.
    [5] H. Cho, and D.E. Burk, "A three-step method for the de-embedding of high-frequency S-parameter measurement", IEEE Trans. on Electron Devices, vol. 38, pp. 1371-1375, 1991.
    [6] "HP 85190 series high-frequency IC-CAP software user*s manual", Hewlett Packard, 1995.
    [7] K. Kurokawa, "Power waves and the Scattering Matrix," IEEE Transactions on Microwave Theory and Techniques, MTT-13,no.3,pp194-202,March 1965.
    [8] G.E. Bodway, "Two port power flow analysis using generalized scattering parameters," Microwave Journal,pp.61-68,May 1967.
    [9] G. Gonzalez, Microwave Transistor Amplifiers and Design, Prentice Hall, Inc.1984.
    [10] G.D. Vendelin, A.M. Pavio, U.L. Rohde, Microwave Circuit Design Using Linear and Nonlinear Techniques, John Wiley & Sons, Inc.,1990.
    [11] T.T. Ha, Solid-State Microwave Amplifier Analysis and Design, John Wiley & Sons, Inc.,1975.
    [12] "S-Parameter, Circuit Analysis and Design," Hewlett-Packard Application Note 95, September 1968.
    [13] "S-Parameter Design," Hewlett-Packard Application Note154,April 1972.
    [14] G. Gonzalez , "Microwave transistor Amplifier Analysis and Design" , Prentice Hall, 1994, p209.
    [15] G.D. Vendelin, A.M. Pavio, U.L. Rohade, "Microwave Circuit Design Using Linear and Nonlinear Techniques", Wiley Interscience, 1990, Chapter 6.
    [16] R.C. Bray, "Apllications of SAW Resonators in High - Performance Instrumentation", IEEE Transaction on Ultrasonics ,Ferroelectric, and Frequency control. Vol. 35 NO. 3,May 1988.
    Advisor
  • Yi-Jen ,Chan(詹益仁)
  • Files No Any Full Text File.
    Date of Submission

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