Title page for 86226011


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Student Number 86226011
Author Cheng-Kai Kao(高振凱)
Author's Email Address No Public.
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Department Optics and Photonics
Year 1998
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title
Date of Defense
Page Count 69
Keyword
  • Blue LED
  • ITO
  • Ohmic contact
  • P-GaN
  • Schottky contact
  • Abstract
    Table of Content 第一章 敘論 ……………………………………………………1
    第二章 理論介紹 ………………………………………………4
    2.1 P型GaN的歐姆接觸接觸形成的理論與測量方法 …4
    2.1.1 文獻回顧 ……………………………………………4
    2.1.2 蕭特基位障理論與P型氮化鎵的歐姆接觸 ………4
    2.1.3 使用傳輸線模型方法量測接觸電阻 …………….…7
    2.2 ITO透明導電膜電學性質………………………………8
    2.2.1 ITO透明導電膜電學性質之理論……………………8
    2.2.2 In2O3導電原理 ………………………………………8
    2.2.3 SnO2導電原理 ………………………………………9
    2.3 ITO透明導電膜光學性質之理論………………………9
    2.3.1 紫外光吸收區 ………………………………………9
    2.3.2 可見光及近紅外光干涉區 …………………………10
    第三章 濺鍍機系統(sputtering system)及濺鍍銦錫氧化膜
    的流程 ………………………………………………11
    3.1 濺鍍機的系統裝置 …………………………………11
    3.2 銦錫氧化膜的濺鍍流程與參數………………………11
    3.3 熱處理…………………………………………………12
    第四章 ITO薄膜之光電特性量測與分析 ……………………13
    4.1 ITO薄膜之光學特性 …………………………………13
    4.2 ITO薄膜之導電性 ……………………………………13
    4.3 ITO薄膜結構之討論 …………………………………14
    4.3.1 簡介…………………………………………………14
    4.3.2 X-ray分析結果 ……………………………………14
    4.4 ITO與GaN的介面SIMS特性分析 …………………15
    4.4.1 簡介…………………………………………………15
    4.4.2 SIMS分析結果 ……………………………………16
    第五章 銦錫氧化膜及其與氮化鎵之接面特性………………17
    5.1 簡介……………………………………………………17
    5.2 銦錫氧化膜與P型氮化鎵的接觸特性………………17
    5.2.1 P型氮化鎵的結構 …………………………………17
    5.2.2 元件製程……………………………………………17
    5.2.3 元件特性量測與分析………………………………19
    5.3 銦錫氧化膜與金、鎳和P型氮化鎵的接觸特性……19
    5.3.1 元件製程……………………………………………19
    5.3.2 元件特性量測與分析………………………………20
    5.4 銦錫氧化膜蕭基二極體之製作………………………21
    5.4.1 元件製程……………………………………………21
    5.4.2 元件特性量測與分析………………………………22
    第六章 結論……………………………………………………25
    參考文獻 …………………………………………………………26
    Reference [1] J. S. Foresi, and T. D. Moustakas, Applied Physics Letters, Vol. 62, p.2859, 1993
    [2] T. Mori, T. Kozawa, T. Ohwaki, Y.Taga, S. Nagai, S. Yamasaki, S Asami, N. Shibata, and M. Koike, Applied Physics Letters Vol 69, p.3537, 1996
    [3] S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, Jpn. J. Appl. Phys, Vol 34, L797, 1995
    [4] G. Marlow, and M. B. Das, Solid-state Electron Vol. 25, p.91, 1982
    [5] John C.C.Fan, and John B. Goodenoubh, J. Appl. Phys. Vol 48(8), p.35, 1997
    [6] Lata Gupta, Abhai Mansingh, and P. K. srivastava, Thin Solid Films, Vol. 176, p.33, 1989
    [7] Dieter K. Schroder, “Semiconductor Material and Devices Characterization”, Wiley International editions, p.99, 1990
    [8] Wen-Fa Wu, Bi-Shiou Chiou, and Shu-Ta Hsieh, Semiconductor Science Technology. Vol.9, p-1242, 1994
    [9] Lynn Davis, Thin Solid Films, Vol. 236, p1, 1993
    [10] G. Sberveglieri P. Benussi, G. coccoli, S Groppelli, and P. Nelli, Thin Solid Film, Vol 186, p.351, 1990
    [11] H.Demiryont, James R Sites, and Kent Geib, Applied Optics, Vol. 24, p.490, 1985
    [12] Dieter K. Schroder, “Semiconductor Material and Devices Characterization”, Wiley International editions, p.99, 1990
    Advisor
  • Ching-Ting Lee(李清庭)
  • Files No Any Full Text File.
    Date of Submission

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