Title page for 86222006


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Student Number 86222006
Author Cheng-Huang Kuo(郭政煌)
Author's Email Address No Public.
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Department Physics
Year 1998
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title Characteristics of Mg-doped GaN by diffusion process
Date of Defense 0000-00-00
Page Count 50
Keyword
  • diffusion
  • diffusion source
  • GaN
  • hole concentration
  • Magnesium nitride
  • Mg
  • mobility
  • photoluminescence
  • Abstract We have successfully doped Mg into undoped GaN epitaxial film by diffusion process and converted it to p-type conductivity. This p-type GaN film is measured by Hall effect and found with carrier concentration and mobility about 6?1018 cm-3 and 5 cm2/V-s, and achieved at diffusion temperature of 1000℃ / 2hr with diffusion source Mg. The other p-type GaN film had carrier concentration and mobility about 1.3?1015 cm-3 and 5 cm2/V-s, and achieved at diffusion temperature of 1000℃ / 2hr with diffusion source (Mg+Mg3N2) . For the Mg-diffused GaN , the low temperature photoluminescence (PL) results display a blue emission line around 2.95 eV. For the (Mg+Mg3N2)-diffused GaN, the low temperature PL spectra show only a broad emission line around 3.1 eV , its peak position is similar to the as-grown Mg-doped p-type GaN . For the Mg3N2-diffused GaN , the low temperature PL spectra is
    similar with as-grown GaN.
    Table of Content 目錄
    論文摘要………………………………………………………………Ⅰ
    目錄……………………………………………………………………Ⅲ
    圖目……………………………………………………………………Ⅵ
    表目……………………………………………………………………Ⅸ
    第一章 緒論………………………………………………………1
    1.1 氮化鎵簡介………………………………………………….1
    1.2 擴散製程對p-型氮化鎵的發展與重要性…………………2
    第二章 擴散製程原理…………………………………………5
    2.1 原理………………………………………………………….5
    2.2 擴散方程與擴散側圖……………………………………….6
    2.2.1固定表面濃度擴散………………………………..6
    2.2.2 固定總摻雜擴散.…………………………………7
    2.3 摻雜源……………………………………………………….7
    2.3.1 鎂………………………………………………….7
    2.3.2 氮化鎂…………………………………………...7
    2.3.3 鎂+氮化鎂…………………………………………8
    第三章 實驗方法………………………………………………12
    3.1 原生(as-grown)氮化鎵氧化層的清除…………………12
    3.2 擴散源氧化層的清除………………………………………13
    3.3 石英管之清洗………………………………………………14
    3.4 擴散製程.………………………………………………….14
    第四章 擴散製程後的氮化鎵特性究……………………19
    4.1 表面特性研究………………………………………………19
    4.2 光性研究……………………………………………………20
    4.3 電性研究……………………………………………………22
    4.4 摻雜縱深研究………………………………………………25
    第五章 總結……………………………………………………….43
    5.1 結論…………………………………………………………43
    5.2 未來研究與發展方向………………………………………44
    參考文獻…………………………………………………………….49
    Reference 參考文獻
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    Advisor
  • G. C. Chi(紀國鐘)
  • Files No Any Full Text File.
    Date of Submission

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