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Student Number 85222005
Author Ching-Jen Pan(q)
Author's Email Address No Public.
Statistics This thesis had been viewed 363 times. Download 0 times.
Department Physics
Year 1997
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title Characteristics of Mg-doped GaN
Date of Defense 0000-00-00
Page Count 44
Keyword
  • diffusion
  • GaN
  • ion implantation
  • Mg
  • Abstract
    Table of Content Abstract (in Chinese) i
    Abstract (in English) ii
    Table of Contents iv
    Figure Captions v
    Table Captions vii
    Chapter 1 Introduction and Outline 1
    Chapter 2 Doping of GaN 3
    2-1 Wafer Structure 3
    2-2 Wafer Cutting and Cleaning 3
    2-3 Doping and Activation 4
    2-3-1 Activation ofas-grown Mg-doped GaN 4
    2-3-2 Ion Implantation 4
    2-3-3 Diffusion 5
    2-4 Contact Metallization 6
    Chapter 3 Experimental Methods 7
    3-1 Photoluminescence 7
    3-2 Hall Measurement 7
    3-3 X-ray Diffi'action 8
    3-4 Secondary Ion Mass Spectrometry 8
    Chapter 4 Characterizations of P-type or Mg-doped GaN 10
    4-1 Mg-doped GaN grown by MOCVD 10
    4-2 Mg-implanted GaN 12
    4-3 Mg-diffused GaN 17
    Chapter 5 Conclusions and Future Works 20
    5-1 Conclusions 20
    5-2 Future Works 21
    References 22
    Tables 25
    Figures 26
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    Advisor
  • Gou-Chung Chi()
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