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Student Number 84324025
Author Chao, Chi Kang(ӭ)
Author's Email Address No Public.
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Department Electrical Engineering
Year 1996
Semester 2
Degree Master
Type of Document Master's Thesis
Language zh-TW.Big5 Chinese
Title The study of reactive ion etching GaN and InGaN
Date of Defense
Page Count 45
Keyword
  • GaN
  • InGaN
  • RIE
  • Abstract This study is focused on the effects of GaN and InGaN of the
    most important processes of GaN-based materials, reactive ion
    etching(RIE). We found that when we use Boron trichloride to be
    the reactive gas, in the conditions of higher power, lower gas
    flow rate, and higher reactive chamber pressure ,wewill achieve
    higher etch rate. In consideration of the above approch, we have
    a high etch rate of 132.2nm/min in etching GaN at 200W, Boron
    trichloride 2sccm, 25mtorr. This is a very efficient data in the
    recent researches.In the other way, we use rapid thermal
    annealing (RTA) to recover the damage by RIE, and we found that
    it can make a great progress of the light emittingefficiency.
    For example, the damage of GaN light emitting efficiency caused
    byboron trichloride etching can be recovered from 15% to 65% in
    the main lightemitting region after rapid thermal annealed by
    1050J 30sec.
    Table of Content
    Reference
    Advisor
  • J.I.Chyi(us)
  • Files No Any Full Text File.
    Date of Submission

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